GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOR
AssigneeEfficient Power Conversion Corporation
InventorsVictor Estrada, Robert Strittmatter, Jianjun Cao, Robert Beach, Muskan Sharma, Alexander Lidow, Wen-Chia Liao, Massimo Grasso, Sergio Morini
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Abstract
This invention pertains to the design of a novel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with multiple metal contacts to a single contiguous p-GaN island. The invention encompasses various embodiments which introduce innovative mechanisms for threshold voltage (Vth) control through hole injection and removal.
Claims23
A gallium nitride (GaN) transistor having a voltage threshold at which the transistor turns ON, said enhancement mode transistor comprising:
- a source electrode and a drain electrode;
- a gate structure having a gate metal disposed on a GaN material;
- and
- a first hole injector/collector electrode disposed on the GaN material and configured to adjust the voltage threshold by altering a number of holes or electrons in the GaN material.
An enhancement mode gallium nitride (GaN) transistor having a voltage threshold at which the transistor turns ON, said enhancement mode transistor comprising:
- a source electrode and a drain electrode;
- a GaN material layer;
- a gate structure having a gate metal disposed on said GaN material layer;
- and
- a first hole injector/collector electrode disposed on said GaN material layer;
- a second hole injector/collector electrode disposed on said GaN material layer;
- wherein said first hole injector/collector electrode is configured to receive a positive voltage bias to inject holes into said GaN material layer and lower the voltage threshold, and said second hole injector/collector electrode is configured to receive a negative voltage bias to remove holes from said GaN material layer and raise the voltage threshold.
A transistor having a voltage threshold at which the transistor turns ON, said transistor comprising:
- a source electrode and a drain electrode;
- a gate structure having a gate metal disposed on a carrier material;
- a first hole injector/collector electrode disposed on the carrier material;
- and
- a circuit configured to detect the voltage threshold and apply a positive voltage bias to said first hole injector/collector electrode to inject holes into the carrier material to lower the voltage threshold, wherein a magnitude of the positive voltage bias is based on the detected voltage threshold whereby the larger the magnitude the more holes that are injected into the carrier material and the greater the voltage threshold is lowered.
Dependencies are inferred from the claim text.