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US 2026/0122952 A1Published application
GaN HEMT WITH REDUCED THRESHOLD SHIFTING
AssigneeEfficient Power Conversion Corporation
InventorsRobert Strittmatter, Jianjun Cao, Robert Beach, Victor Estrada, Muskan Sharma, Wen-Chia Liao, Massimo Grasso, Alexander Lidow
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Abstract
A gallium nitride (GaN) transistor is provided having a voltage threshold at which the transistor turns ON. The transistor has one or more control electrodes and a gate electrode disposed on a GaN material layer. A bias is applied to the control electrode(s) to prevent shifting of the transistor voltage threshold.
Claims12
An enhancement mode GaN HEMT transistor, comprising:
- a p-GaN layer having a top surface, a first side edge, and a second side edge opposite the first side edge;
- a first electrode disposed on the top surface of the p-GaN layer by the first side edge;
- a second electrode disposed on the p-GaN layer by the second side edge;
- and
- a gate electrode disposed on the p-GaN layer between the first electrode and the second electrode;
- wherein, when a bias is applied to the first and second electrodes, the transistor operates as a field effect transistor controlled by the gate electrode.
3 more elements
An GaN HEMT transistor having a voltage threshold at which the transistor turns ON, said transistor comprising:
- a p-GaN layer having a first side edge and a second side edge, wherein the first side edge is on a side of the p-GaN layer closest to a drain electrode;
- a first electrode disposed on the p-GaN layer by the first side edge, wherein, when a first bias is applied to the first electrode, charges accumulating at the side edge do not affect the voltage threshold of the transistor;
- and
- a second electrode disposed on the p-GaN layer along the second side edge, wherein the second side edge is on a side of the p-GaN layer closest to a source electrode, wherein the transistor operates as a field effect transistor controlled by one or both of said first and second electrodes.
1 more element
Dependencies are inferred from the claim text.