Back to results
US 8,436,398 B2Granted
Back diffusion suppression structures
AssigneeEfficient Power Conversion Corporation
InventorsAlexander Lidow, Robert Beach, Guang Y. Zhao, Jianjun Cao
Life of this patent
Estimating the term…
Abstract
An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
Claims19
An enhancement-mode III Nitride transistor comprising:
- a substrate;
- transition layers;
- a buffer layer comprised of a III Nitride material;
- a barrier layer comprised of a III Nitride material and having an Al fraction;
- drain and source contacts;
- a gate comprising:
- a III Nitride layer containing at least one p-type dopant;
- and
- a contact layer located over the III Nitride layer;
- and
- a diffusion barrier layer disposed between the gate and the barrier layer, the diffusion barrier layer comprised of a III Nitride material and having an Al fraction, the entirety of the diffusion barrier layer being located over the barrier layer, wherein the Al fraction of the diffusion barrier layer is greater than the Al fraction of the barrier layer.
8 more elements
An enhancement-mode III Nitride transistor comprising:
- a substrate;
- transition layers;
- a buffer layer comprised of a III Nitride material;
- a barrier layer comprised of a III Nitride material;
- drain and source contacts;
- and
- a gate comprising:
- a III Nitride layer, the III Nitride layer having a first region and a second region each having a p-dopant concentration, wherein the p-type dopant concentration of the first region is less than the p-type dopant concentration of the second region, the entirety of the III Nitride layer being located above the barrier layer;
- and
- a contact layer located over the III Nitride layer.
7 more elements
Dependencies are inferred from the claim text.