Y10T 117/1096
Including pressurized crystallization means [e.g., hydrothermal]
Official title: including pressurized crystallization means [e.g., hydrothermal]
Y10T117/1096 (Including pressurized crystallization means [e.g., hydrothermal]) appears on 82 US grants and 59 published applications in this corpus.
Search patents in Y10T- Granted patents
- 82
- Published applications
- 59
- Assignees
- 56
- Inventors
- 155
- Latest grant
- 12 Mar 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 0 | 0 |
| 2003 | 3 | 4 |
| 2004 | 1 | 2 |
| 2005 | 2 | 1 |
| 2006 | 2 | 4 |
| 2007 | 2 | 7 |
| 2008 | 3 | 3 |
| 2009 | 2 | 7 |
| 2010 | 4 | 7 |
| 2011 | 4 | 4 |
| 2012 | 2 | 6 |
| 2013 | 7 | 3 |
| 2014 | 4 | 5 |
| 2015 | 6 | 4 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
| 2018 | 3 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Synthetic block for optimizing the performance of diamonds and gemstones12 Mar 2024US 11,925,924 B2GUILIN KEYSTONE MACHINERY CO., Ltd.
- Apparatus for processing materials at high temperatures and pressures4 Dec 2018US 10,145,021 B2SLT Technologies, Inc.
- Method of manufacturing a pressure vessel for growing single crystals27 Mar 2018US 9,926,642 B2Furuya Metal Co., Ltd.
- Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate16 Jan 2018US 9,869,033 B2Ricoh Company, Ltd.
- Method for growing group III-nitride crystals in supercritical ammonia using an autoclave24 Jan 2017US 9,551,088 B2The Regents of the University of California
- Synthetic block for optimizing the performance of diamonds and gemstones6 Oct 2022US 2022/0314179 A1Guilin Keystone Superhard Material Co., Ltd.
- High pressure reactor for supercritical ammonia1 Oct 2015US 2015/0275391 A1Seoul Semiconductor Co., Ltd.
- Method of manufacturing a pressure vessel for growing single crystals2 Jul 2015US 2015/0182928 A1Furuya Metal Co., Ltd.
- Production of a gan bulk crystal substrate and a semiconductor device formed on a gan bulk crystal substrate4 Jun 2015US 2015/0152568 A1Ricoh Company, Ltd.
- Apparatus for processing materials at high temperatures and pressures7 May 2015US 2015/0122172 A1Momentive Performance Materials Inc.
Most cited
By later US patents
- High pressure high temperature growth of crystalline group III metal nitrides300US 7,063,741 B2General Electric Company · 2006
- Crystal growing cell135US 5,423,287 ANational Space Development Agency of Japan · 1995
- Apparatus for producing single crystal and quasi-single crystal, and associated method95US 7,368,015 B2Momentive Performance Materials Inc. · 2008
- Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate87US 6,592,663 B1Ricoh Company, Ltd. · 2003
- High pressure apparatus and method for nitride crystal growth65US 8,097,081 B2Soraa, Inc. · 2012