High pressure apparatus and method for nitride crystal growth
AssigneeSoraa, Inc.
InventorMark P. D'Evelyn
Life of this patent
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Abstract
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
Claims19
A apparatus for crystal growth comprising:
- a cylindrical capsule region for containing a cylindrical capsule within which a crystal is to be grown under elevated pressure and temperature, the cylindrical capsule region having a length and ends;
- an annular heating member enclosing the length of the cylindrical capsule region for heating the contents of the cylindrical capsule to an elevated temperature to create an elevated pressure within the capsule;
- at least one annular ceramic member disposed around the annular heating member, each of the at least one annular ceramic members having a thermal conductivity of less than about 4 watts per meter-Kelvin;
- and
- an enclosure disposed around all of the at least one annular ceramic member.
A method of crystal growth comprising:
- providing an apparatus for crystal growth which includes:
- a cylindrical capsule within which a crystal is to be grown under elevated pressure and temperature, the cylindrical capsule region having a length and ends;
- an annular heating member enclosing the length of the cylindrical capsule for heating the contents of the cylindrical capsule to an elevated temperature to create an elevated pressure within the capsule;
- at least one annular ceramic member disposed around the annular heating member, each of the at least one annular ceramic members having a thermal conductivity of less than about 4 watts per meter-Kelvin;
- and
- an enclosure disposed around all of the at least one annular ceramic members;
- placing solvent in the capsule;
- heating the capsule using the heating member to cause an increase in temperature within the capsule to greater than 200 degrees Celsius to cause the solvent to be superheated;
- and
- slidably removing the capsule from the heating member after completing the crystal growth.
Apparatus for carrying out a crystal growth process at high pressure comprising:
- a cylindrical capsule region for containing a cylindrical capsule within which a crystal is to be grown under elevated pressure and temperature, the cylindrical capsule region having a length and ends;
- an annular heating member enclosing the length of the cylindrical capsule region for heating the contents of the cylindrical capsule to an elevated temperature to create an elevated pressure within the capsule, where the annular heating member is substantially rigid;
- at least one annular ceramic member disposed around the annular heating member;
- a pressure containing enclosure disposed around all of the annular ceramic member;
- and
- wherein the capsule is removable from the heater without substantial deformation of the heater after completion of the crystal growth process.
Dependencies are inferred from the claim text.