Y10T 117/1064
Including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
Official title: including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
Y10T117/1064 (Including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]) appears on 75 US grants and 44 published applications in this corpus.
Search patents in Y10T- Granted patents
- 75
- Published applications
- 44
- Assignees
- 58
- Inventors
- 171
- Latest grant
- 25 Oct 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 6 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 8 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 1 | 5 |
| 2006 | 2 | 4 |
| 2007 | 0 | 8 |
| 2008 | 5 | 5 |
| 2009 | 3 | 3 |
| 2010 | 4 | 8 |
| 2011 | 3 | 2 |
| 2012 | 6 | 2 |
| 2013 | 1 | 4 |
| 2014 | 3 | 0 |
| 2015 | 5 | 0 |
| 2016 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Weir for inhibiting melt contamination25 Oct 2016US 9,476,141 B2SunEdison, Inc.
- Crystal manufacturing apparatus29 Dec 2015US 9,222,199 B2Ricoh Company, Ltd.
- Nitride single crystal manufacturing apparatus28 Apr 2015US 9,017,479 B2NGK Insulators, Ltd.
- Apparatus and method for detecting specific object pattern from image17 Mar 2015US 8,983,226 B2Canon Kabushiki Kaisha
- Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up device24 Feb 2015US 8,961,686 B2Sumco Techxiv Corporation
- Weir for inhibiting melt contamination28 Jan 2016US 2016/0024684 A1SunEdison, Inc.
- Device for growing sapphire ingot at high speed and sapphire cover glass having excellent optical properties12 Dec 2013US 2013/0329296 A1Hon Hai Precision Industry Co., Ltd.
- Method and Systems for Characterization and Production of High Quality Silicon9 May 2013US 2013/0112134 A1Giga Industries, Inc.
- Apparatus and method for detecting specific object pattern from image18 Apr 2013US 2013/0094709 A1Canon Kabushiki Kaisha
- Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth17 Jan 2013US 2013/0015492 A1Japan Science and Technology Agency
Most cited
By later US patents
- Crystals for a semiconductor radiation detector and method for making the crystals76US 7,316,746 B2General Electric Company · 2008
- Resonant cavity light emitting devices and associated method67US 7,582,498 B2Momentive Performance Materials Inc. · 2009
- Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates63US 7,009,215 B2General Electric Company · 2006
- Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor34US 5,292,487 ASumitomo Electric Industries, Ltd. · 1994
- Material handling system for growing high-purity crystals25US 5,958,133 AGeneral Signal Corporation · 1999