Resonant cavity light emitting devices and associated method

A method, comprising:

• arranging a seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid disposed in a sealable container disposed in a multiple-zone furnace;
• growing gallium nitride material on the seed gallium nitride crystal by mass transport from the source material to the seed gallium nitride crystal through the nitrogen-containing superheated fluid, said growing producing a single-crystal gallium nitride substrate secured to the seed gallium nitride crystal, said growing comprising applying a temporally varying thermal gradient between the seed gallium nitride crystal and the source material to produce an increasing growth rate during at least a portion of the growing;
• and
• depositing a stack of group III-nitride layers on the single-crystal gallium nitride substrate, the stack comprising a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

A system for producing a resonant cavity light emitting device, comprising

• means for arranging a seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid in a container disposed in a multiple-zone furnace, the nitrogen-containing superheated fluid providing a medium for mass transport of gallium nitride precursors between the seed gallium nitride crystal and the source material;
• means for applying a first thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are arranged in the nitrogen-containing superheated fluid to prepare a surface of the seed gallium nitride crystal;
• means for growing gallium nitride material on the prepared surface of the seed gallium nitride crystal, the growing comprising applying a second thermal profile that is different from the first thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are arranged in the nitrogen-containing superheated fluid, said growing producing a single-crystal gallium nitride substrate;
• and
• means for depositing a stack of group III-nitride layers on the single-crystal gallium nitride substrate, the stack comprising a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

A method for producing a resonant cavity light emitting device, the method comprising:

• a) arranging a seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid in a container disposed in a multiple-zone furnace, the nitrogen-containing superheated fluid providing a medium for mass transport of gallium nitride precursors between the seed gallium nitride crystal and the source material;
• b) etching a surface of the seed gallium nitride crystal;
• then
• c) growing gallium nitride material on the etched surface of the seed gallium nitride crystal, said growing producing a single-crystal gallium nitride substrate;
• and
• d) depositing a stack of group III-nitride layers on the single-crystal gallium nitride substrate, the stack comprising a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

A method for producing a resonant cavity light emitting device, the method comprising:

• arranging a seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid in a container disposed in a multiple-zone furnace, the nitrogen-containing superheated fluid providing a medium for mass transport of gallium nitride precursors between the seed gallium nitride crystal and the source material, wherein the seed gallium nitride crystal has a dislocation density below 105 cm−2;
• further providing a halide salt mineralizer comprising at least one NH4F and NH4Cl in the nitrogen-containing superheated fluid for promoting dissolving of gallium nitride into the nitrogen-containing superheated fluid;
• growing gallium nitride material on the surface of the seed gallium nitride crystal, said growing producing a single-crystal gallium nitride boule;
• and
• depositing a stack of group III-nitride layers on a single-crystal gallium nitride wafer, said wafer having been prepared from the single-crystal gallium nitride boule, the stack comprising a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.