Crystals for a semiconductor radiation detector and method for making the crystals
AssigneeGeneral Electric Company
InventorsMark Philip D'Evelyn, Dong-Sil Park, John Thomas Leman
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Abstract
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.
Claims9
A method for growing Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CZT) crystal comprising:
- positioning a plurality of CZT or CdTe seed crystals in a growth zone of a reactor chamber divided by a porous baffle into the growth zone and a nutrient zone;
- positioning CZT or CdTe nutrient material in the nutrient zone;
- filling the reactor chamber with a solvent fluid;
- pressurizing the reactor such that the solvent fluid becomes supercritical;
- heating the reactor such that the nutrient zone is warmer than the growth zone;
- dissolving the nutrient material into the supercritical fluid;
- transporting the supercritical fluid with dissolved nutrient through the baffle and to the growth zone, and
- growing crystals from the seed crystals as the dissolved nutrients deposit on the crystals, wherein the growth zone temperature is at least 450° C. and the reactor pressure is at least 700 bar.
Dependencies are inferred from the claim text.