Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

A resonant cavity light emitting device including:

• a stack of group III-nitride layers including an active region;
• a single-crystal gallium nitride substrate substantially free of tilt-boundaries on which the stack of group III-nitride layers is disposed, the single-crystal gallium nitride substrate having a dislocation density less than 104 cm−2;
• and
• first and second mirrors defining a resonant cavity inside of which the active region is disposed, light produced by the active region resonating in the resonant cavity, at least one of the first and second mirrors including a distributed Bragg reflector.

A resonant cavity light emitting device including:

• a single-crystal gallium nitride substrate having a characteristic absorption peak at about 3175 cm−1 with an absorbance per unit thickness greater than about 0.01 cm−1.
• a stack of group III-nitride layers disposed on the single-crystal gallium nitride substrate, the stack including a first mirror sub-stack and an active region;
• and
• a mirror cooperating with the first mirror sub-stack to define a resonant cavity inside of which the active region is disposed.

A resonant cavity light emitting device including:

• a stack of group III-nitride layers including an active region;
• a single-crystal gallium nitride substrate substantially free of tilt-boundaries on which the stack of group III-nitride layers is disposed, the single-crystal gallium nitride substrate having a dislocation density less than 102 cm−2;
• and
• first and second mirrors defining a resonant cavity inside of which the active region is disposed, light produced by the active region resonating in the resonant cavity.

A resonant cavity light emitting device including:

• a stack of group III-nitride layers including an active region;
• a single-crystal gallium nitride substrate substantially free of tilt-boundaries on which the stack of group III-nitride layers is disposed, the single-crystal gallium nitride substrate having a dislocation density less than 104 cm−2;
• and
• first and second mirrors arranged parallel with the active region and defining a vertical resonant cavity inside of which the active region is disposed, light produced by the active region resonating in the resonant cavity.