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US 2013/0015492 A1Published application
Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth
AssigneesJapan Science and Technology Agency, The Regents of the University of California
InventorsTadao Hashimoto, Hitoshi Sato, Shuji Nakamura
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Abstract
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
Claims16
A method for fabricating an opto-electronic or electronic device, comprising:
- ammonothermally growing a Group-III nitride substrate from a Group-III nitride seed, wherein the Group-III nitride substrate is a bulk substrate;
- and
- growing one or more Group-III nitride layers on or above an N-polar surface of the Group-III nitride substrate, wherein the N-polar surface has an off-axis angle less than 10 degrees and the N-polar surface, as grown, is smoother than a surface, as grown, of the Group-III nitride substrate that is Group-III-polar.
A method of fabricating an opto-electronic or electronic device comprising:
- ammonothermally growing a Group-III nitride substrate from a Group-III nitride seed, wherein the Group-III nitride substrate-is a bulk substrate;
- and
- growing one or more Group-III nitride layers on or above a surface of the Group-III nitride substrate that is not a C-plane (0001) surface, wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface, as grown, is smoother than the C-plane (0001) surface, as grown, of the Group-III nitride substrate.
Dependencies are inferred from the claim text.