Y10T 117/1008
With responsive control means
Official title: with responsive control means
Y10T117/1008 (With responsive control means) appears on 480 US grants and 304 published applications in this corpus.
Search patents in Y10T- Granted patents
- 480
- Published applications
- 304
- Assignees
- 246
- Inventors
- 779
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 8 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 6 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 11 | 0 |
| 1990 | 6 | 0 |
| 1991 | 4 | 0 |
| 1992 | 12 | 0 |
| 1993 | 9 | 0 |
| 1994 | 2 | 0 |
| 1995 | 6 | 0 |
| 1996 | 7 | 0 |
| 1997 | 11 | 0 |
| 1998 | 19 | 0 |
| 1999 | 24 | 0 |
| 2000 | 23 | 0 |
| 2001 | 12 | 7 |
| 2002 | 10 | 16 |
| 2003 | 14 | 26 |
| 2004 | 14 | 16 |
| 2005 | 14 | 26 |
| 2006 | 19 | 25 |
| 2007 | 18 | 26 |
| 2008 | 31 | 22 |
| 2009 | 19 | 24 |
| 2010 | 14 | 21 |
| 2011 | 22 | 14 |
| 2012 | 18 | 20 |
| 2013 | 22 | 15 |
| 2014 | 22 | 9 |
| 2015 | 9 | 8 |
| 2016 | 6 | 8 |
| 2017 | 7 | 4 |
| 2018 | 6 | 3 |
| 2019 | 7 | 4 |
| 2020 | 2 | 1 |
| 2021 | 1 | 3 |
| 2022 | 2 | 2 |
| 2023 | 0 | 2 |
| 2024 | 2 | 1 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Method for producing Si ingot single crystal, Si ingot single crystal, and apparatus thereof16 Jul 2024US 12,037,696 B2GlobalWafers Co., Ltd.
- Apparatus for producing Si ingot single crystal16 Jul 2024US 12,037,697 B2GlobalWafers Co., Ltd.
- RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus20 Dec 2022US 11,532,418 B2APPLIED Materials.Inc.
- Devices and methods for growing crystals9 Aug 2022US 11,408,089 B2Meishan Boya Advanced Materials Co., Ltd.
- Devices and methods for growing crystals17 Apr 2025US 2025/0122640 A1Meishan Boya Advanced Materials Co., Ltd.
- Methods and systems for producing composite crystals4 Apr 2024US 2024/0110307 A1Meishan Boya Advanced Materials Co., Ltd.
- Si ingot single crystal28 Sep 2023US 2023/0304185 A1GlobalWafers Co., Ltd.
- Apparatus for producing si ingot single crystal21 Sep 2023US 2023/0295833 A1GlobalWafers Co., Ltd.
- Devices and methods for growing crystals10 Nov 2022US 2022/0356599 A1Meishan Boya Advanced Materials Co., Ltd.
Most cited
By later US patents
- Combinatorial molecular layer epitaxy device499US 6,344,084 B12002
- Atomic layer deposition183US 6,585,823 B1ASM International N.V. · 2003
- Ellipsometric control of material growth168US 5,091,320 ABell Communications Research, Inc. · 1992
- Microfluidic method employing delivery of plural different fluids to same lumen146US 6,797,056 B2Syrrx, Inc. · 2004
- Precursor mixtures for use in preparing layers on substrates105US 6,273,951 B1Micron Technology, Inc. · 2001