Precursor mixtures for use in preparing layers on substrates
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the formula LyMYz (Formula I) wherein: M is a metal; each L group is independently a neutral ligand containing one or more Lewis-base donor atoms; each Y group is independently an anionic ligand; y=a nonzero integer; and z=a nonzero integer corresponding to the valence state of the metal.
Claims28
A method of manufacturing a semiconductor structure comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal;
- each L group is independently a neutral ligand containing one or more Lewis-base donor atoms;
- each Y group is independently an anionic ligand;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- and
- vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly.
A method of manufacturing a semiconductor structure comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal selected from the group of the Group IA metals, Group IIA metals, the Group IVB metals, the Group VA metals, and the Group VB metals;
- each L group is independently a neutral ligand selected from the group of polyamines, polyethers, aminoalcohols, ether-alcohols, and mixtures thereof;
- each Y group is independently an anionic ligand selected from the group of carboxylates, ketoiminates, amidinates, diketonates, diiminates, and mixtures thereof;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- and
- vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly.
A method of manufacturing a memory device structure comprising:
- providing a substrate having a first electrode thereon;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal;
- each L group is independently a neutral ligand containing one or more Lewis-base donor atoms;
- each Y group is independently an anionic ligand;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- vaporizing the precursor composition and directing it toward the substrate to form a dielectric layer comprising an oxide layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
A method of manufacturing a memory device structure comprising:
- providing a substrate having a first electrode thereon;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal selected from the group of the Group IA metals, Group IIA metals, the Group IVB metals, the Group VA metals, and the Group VB metals;
- each L group is independently a neutral ligand selected from the group of polyamines, polyethers, aminoalcohols, ether-alcohols, and mixtures thereof;
- each Y group is independently an anionic ligand selected from the group of carboxylates, ketoiminates, amidinates, diketonates, diiminates, and mixtures thereof;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- vaporizing the precursor composition and directing it toward the substrate to form a dielectric layer comprising an oxide layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
A method of forming a layer on a substrate comprising:
- providing a substrate;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal;
- each L group is independently a neutral ligand containing one or more Lewis-base donor atoms;
- each Y group is independently an anionic ligand;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- and
- vaporizing the precursor composition and directing it toward the substrate to form a metal-containing layer on the substrate.
A method of forming a layer on a substrate comprising:
- providing a substrate;
- providing a precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal selected from the group of the Group IA metals, Group IIA metals, the Group IVB metals, the Group VA metals, and the Group VB metals;
- each L group is independently a neutral ligand selected from the group of polyamines, polyethers, aminoalcohols, ether-alcohols, and mixtures thereof;
- each Y group is independently an anionic ligand selected from the group of carboxylates, ketoiminates, amidinates, diketonates, diiminates, and mixtures thereof;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and further wherein there are at least two different L groups present in the precursor composition;
- and
- vaporizing the precursor composition and directing it toward the substrate to form a metal-containing layer on the substrate.
A chemical vapor deposition precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal;
- each L group is independently a neutral ligand containing one or more Lewis-base donor atoms;
- each Y group is independently an anionic ligand;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and
- further wherein there are at least two different L groups present in the precursor composition.
A chemical vapor deposition precursor composition comprising two or more miscible liquid complexes of the formula:
- LyMYz
- wherein:
- M is a metal selected from the group of the Group IA metals, Group IIA metals, the Group IVB metals, the Group VA metals, and the Group VB metals;
- each L group is independently a neutral ligand selected from the group of polyamines, polyethers, aminoalcohols, ether-alcohols, and mixtures thereof;
- each Y group is independently an anionic ligand selected from the group of carboxylates, ketoiminates, amidinates, diketonates, diiminates, and mixtures thereof;
- y=a nonzero integer;
- and
- z=a nonzero integer corresponding to the valence state of the metal;
- and
- further wherein there are at least two different L groups present in the precursor composition.
Dependencies are inferred from the claim text.