Method for producing Si ingot single crystal, Si ingot single crystal, and apparatus thereof

A method for producing a Si ingot single crystal, which is a noncontact crucible (NOC) growth method that the Si ingot single crystal is grown within a Si melt without contacting a wall of a crucible, the method for producing the Si ingot single crystal, comprising:

• a Si ingot single crystal growing step, wherein the Si ingot single crystal is grown within the Si melt disposed in the crucible, the Si ingot single crystal growing step comprising:
• disposing a low temperature region in the Si melt;
• disposing a Si seed crystal to contact a surface of the Si melt to start crystal growth, the Si ingot single crystal is grown within the low temperature region under the surface of the Si melt along the surface of the Si melt or toward the inside of the Si melt, wherein the Si ingot single crystal has a growth interface between the Si ingot single crystal and the Si melt, the Si ingot single crystal has a vacancy concentration distribution and an interstitial concentration distribution in which a vacancy concentration and an interstitial concentration respectively vary with a distance from the growth interface;
• adjusting a temperature gradient in the Si ingot single crystal and a growth rate of the Si ingot single crystal in the Si melt, so that in the vacancy concentration distribution and the interstitial concentration distribution, along with an increase of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease, the greater a distance from the growth interface, the smaller a difference between the vacancy concentration and the interstitial concentration;
• and
• a continuous growing step, repeating the step of adjusting the temperature gradient and the growth rate of the Si ingot single crystal in the Si melt to obtain the Si ingot single crystal.