Y10S 977/935
Spin dependent tunnel, sdt, junction
Official title: Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR
Y10S977/935 (Spin dependent tunnel, sdt, junction) appears on 153 US grants and 150 published applications in this corpus.
Search patents in Y10S- Granted patents
- 153
- Published applications
- 150
- Assignees
- 56
- Inventors
- 263
- Latest grant
- 7 Jun 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 4 | 5 |
| 2002 | 2 | 3 |
| 2003 | 3 | 2 |
| 2004 | 3 | 2 |
| 2005 | 1 | 4 |
| 2006 | 4 | 2 |
| 2007 | 2 | 4 |
| 2008 | 2 | 26 |
| 2009 | 12 | 16 |
| 2010 | 16 | 10 |
| 2011 | 25 | 13 |
| 2012 | 18 | 18 |
| 2013 | 9 | 17 |
| 2014 | 19 | 15 |
| 2015 | 22 | 6 |
| 2016 | 8 | 5 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 0 | 1 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits7 Jun 2022US 11,355,623 B2Intel Corporation
- Advanced processing apparatus comprising a plurality of quantum processing elements23 Jun 2020US 10,692,924 B2NewSouth Innovations Pty Limited
- Magnetoresistive memory element having a metal oxide tunnel barrier13 Sep 2016US 9,444,037 B2Everspin Technologies, Inc.
- Antiferromagnetic storage device6 Sep 2016US 9,437,269 B2Globalfoundries Inc.
- Antiferromagnetic storage device17 May 2016US 9,343,130 B2Globalfoundries Inc.
- Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits7 Feb 2019US 2019/0043968 A1Intel Corporation
- Advanced processing apparatus comprising a plurality of quantum processing elements9 Aug 2018US 2018/0226451 A1NewSouth Innovations Pty Limited
- Magnetic tunnel junction structure for mram device28 Jul 2016US 2016/0218278 A1Spin Transfer Technologies, Inc.
- Antiferromagnetic storage device14 Jul 2016US 2016/0203851 A1Globalfoundries Inc.
- Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier16 Jun 2016US 2016/0172582 A1Everspin Technologies, Inc.
Most cited
By later US patents
- Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements224US 7,502,249 B1Grandis, Inc. · 2009
- Storage element and memory101US 7,881,097 B2Sony Corporation · 2011
- Nanotube semiconductor devices and methods for making the same86US 6,858,891 B2Micron Technology, Inc. · 2005
- Nanotube semiconductor devices and methods for making the same84US 6,515,325 B1Micron Technology, Inc. · 2003
- Magnetic tunnel junction structure for MRAM device79US 9,337,412 B2Spin Transfer Technologies, Inc. · 2016