Storage element and memory

A memory comprising:

• a storage layer retaining information based on a magnetization state of a magnetic material;
• and
• two types of mutually intersecting lines,
• with the storage element having a storage layer retaining information based on a magnetization state of a magnetic material;
• a fixed-magnetization layer having a ferromagnetic layer;
• and
• an intermediate layer interposed between the storage layer and the fixed-magnetization layer, wherein
• spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer,
• resistivity of the ferromagnetic layer forming the storage layer is greater than 10.8×10−7 Ωm,
• the storage element is located between the two types of lines in the vicinity of the intersection thereof, and
• currents in the stacking direction flows into the storage element through the two types of lines, and
• wherein the ferromagnetic layer forming the storage layer includes an element selected from the group consisting of C, N, O, Mg, Sc, Y, Al, Si, and combinations thereof.