Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits

A spin qubit device assembly, comprising:

• a substrate having a semiconductor host layer thereon;
• a dopant-based spin qubit device comprising a dopant atom in the semiconductor host layer;
• and
• a window structure over the substrate, the window structure forming an opening above the semiconductor host layer where a width of the opening at a first distance from the semiconductor host layer is smaller than a width of the opening at a second distance from the semiconductor host layer, the second distance being greater than the first distance.

A method of fabricating a spin qubit device assembly, the method comprising:

• providing a substrate with a semiconductor host layer thereon;
• providing a first gate electrode and a second gate electrode over the semiconductor host layer;
• providing a window structure between the first gate electrode and the second gate electrode, the window structure forming an opening above the semiconductor host layer where a width of the opening at a first distance from the semiconductor host layer is smaller than a width of the opening at a second distance from the semiconductor host layer, the second distance being greater than the first distance;
• and
• performing a dopant implantation of a dopant atom in the semiconductor host layer via the opening in the window structure.