Y10S 438/966
Selective oxidation of ion-amorphousized layer
Y10S438/966 (Selective oxidation of ion-amorphousized layer) appears on 41 US grants and 11 published applications in this corpus.
Search patents in Y10S- Granted patents
- 41
- Published applications
- 11
- Assignees
- 29
- Inventors
- 71
- Latest grant
- 18 Oct 2011
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 2 |
| 2003 | 0 | 4 |
| 2004 | 2 | 0 |
| 2005 | 3 | 0 |
| 2006 | 1 | 0 |
| 2007 | 2 | 3 |
| 2008 | 1 | 0 |
| 2009 | 1 | 2 |
| 2010 | 0 | 0 |
| 2011 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
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- Semiconductor device and method of manufacture thereof25 Dec 2007US 7,312,138 B2Kabushiki Kaisha Toshiba
- Method of forming low capacitance esd device and structure therefor25 Jun 2009US 2009/0162988 A1Semiconductor Components Industries, LLC
- Method of forming low capacitance esd device and structure therefor26 Mar 2009US 2009/0079022 A1Semiconductor Components Industries, LLC
- Semiconductor device and method of manufacture thereof20 Sep 2007US 2007/0218605 A1Kabushiki Kaisha Toshiba
- Semiconductor device and method of manufacture thereof20 Sep 2007US 2007/0218606 A1Kabushiki Kaisha Toshiba
- Method for high topography patterning21 Jun 2007US 2007/0140637 A1Imec
Most cited
By later US patents
- MOS device structure and integration method86US 5,691,212 ATaiwan Semiconductor Manufacturing Company.Ltd · 1997
- Method for forming isolated semiconductor structures69US 5,376,560 ANational Semiconductor Corporation · 1994
- Fabrication of isolation oxidation for MOS circuit43US 4,407,696 AMostek Corporation · 1983
- Method of manufacturing a semiconductor substrate having dielectric regions37US 4,552,595 AOki Electric Industry Co., Ltd. · 1985
- Nitride cap sidewall oxide protection from BOE etch34US 5,364,804 ATaiwan Semiconductor Manufacturing Company.Ltd · 1994