Y10S 438/94
Laser ablative material removal
Y10S438/94 (Laser ablative material removal) appears on 298 US grants and 140 published applications in this corpus.
Search patents in Y10S- Granted patents
- 298
- Published applications
- 140
- Assignees
- 124
- Inventors
- 439
- Latest grant
- 11 Aug 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 9 | 0 |
| 1986 | 15 | 0 |
| 1987 | 16 | 0 |
| 1988 | 9 | 0 |
| 1989 | 8 | 0 |
| 1990 | 7 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 9 | 0 |
| 1994 | 10 | 0 |
| 1995 | 8 | 0 |
| 1996 | 12 | 0 |
| 1997 | 7 | 0 |
| 1998 | 8 | 0 |
| 1999 | 10 | 0 |
| 2000 | 14 | 0 |
| 2001 | 8 | 3 |
| 2002 | 8 | 10 |
| 2003 | 7 | 14 |
| 2004 | 8 | 8 |
| 2005 | 12 | 16 |
| 2006 | 10 | 26 |
| 2007 | 5 | 4 |
| 2008 | 11 | 13 |
| 2009 | 6 | 9 |
| 2010 | 15 | 9 |
| 2011 | 12 | 9 |
| 2012 | 10 | 4 |
| 2013 | 5 | 4 |
| 2014 | 4 | 4 |
| 2015 | 4 | 2 |
| 2016 | 2 | 2 |
| 2017 | 1 | 0 |
| 2018 | 0 | 2 |
| 2019 | 2 | 0 |
| 2020 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate11 Aug 2020US 10,741,399 B2President and Fellows of Harvard College
- Silicon-based visible and near-infrared optoelectric devices6 Aug 2019US 10,374,109 B2President and Fellows of Harvard College
- Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate23 Jul 2019US 10,361,083 B2President and Fellows of Harvard College
- Silicon-based visible and near-infrared optoelectric devices17 Oct 2017US 9,793,425 B2President and Fellows of Harvard College
- Method for manufacturing semiconductor light emitting device5 Apr 2016US 9,306,141 B2Kabushiki Kaisha Toshiba
- Silicon-based visible and near-infrared optoelectric devices23 Jan 2020US 2020/0028002 A1President and Fellows of Harvard College
- Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate28 Jun 2018US 2018/0182630 A1President and Fellows of Harvard College
- Silicon-Based Visible And Near-Infrared Optoelectric Devices22 Mar 2018US 2018/0083146 A1President and Fellows of Harvard College
- Silicon-Based Visible And Near-Infrared Optoelectric Devices2 Jun 2016US 2016/0155864 A1President and Fellows of Harvard College
- Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate7 Jan 2016US 2016/0005608 A1President and Fellows of Harvard College
Most cited
By later US patents
- High efficiency light emitting diodes394US 5,912,477 ACree Research, Inc. · 1999
- Method for producing high efficiency light-emitting diodes and resulting diode structures383US 5,631,190 ACree Research, Inc. · 1997
- Energy-efficient, laser-based method and system for processing target material290US 6,281,471 B1GSI Lumonics Corporation · 2001
- Process for producing electrical connections through a substrate191US 4,964,212 ACommissariat A L' Energie Atomique · 1990
- Methods of forming channels and vias in insulating layers187US 5,173,442 AMicroelectronics and Computer Technology Corporation · 1992