Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
AssigneePresident and Fellows of Harvard College
InventorsEric Mazur, Mengyan Shen
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Abstract
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Claims11
A method for processing a silicon substrate, comprising:
- disposing a solid substance on a surface of a silicon substrate, wherein said solid substance comprises an electron-donating constituent,
- placing said surface in contact with a liquid such that at least a portion of said liquid is in contact with said solid substance,
- subsequently, irradiating said surface of the substrate with a plurality of laser pulses having a pulse width in a range of about 50 femtoseconds to about 500 femtoseconds in presence of said liquid on said surface so as to incorporate said electron-donating constituent of said solid substance as a plurality of inclusions within an upper layer of the substrate.
Dependencies are inferred from the claim text.