Method for manufacturing semiconductor light emitting device

A semiconductor light emitting device comprising:

• a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer;
• a p-side electrode and an n-side electrode provided on the semiconductor layer;
• an insulating film provided on the second surface and an outside of a side surface continued from the first surface of the semiconductor layer, the insulating film having a first opening and a second opening, the first opening reaching the n-side electrode, the second opening reaching the p-side electrode;
• a p-side interconnection layer provided on the second surface side and connected to the p-side electrode;
• an n-side interconnection layer provided on the second surface side and connected to the n-side electrode;
• a p-side pillar connected to the p-side interconnection layer and having a first external end portion;
• an n-side pillar connected to the n-side interconnection layer and having a second external end portion;
• and
• a resin provided between the p-side pillar and the n-side pillar, a thickness of the resin being thicker than a thickness of the insulating film,
• a part of any one of the p-side interconnection layer and the n-side interconnection layer being connected to a region not including the light emitting layer of the semiconductor layer, and another part of the one of the p-side interconnection layer and the n-side interconnection layer extending to the light emitting layer side.