H10H 20/8142
Forming resonant cavity structures
Official title: {forming resonant cavity structures}
H10H20/8142 (Forming resonant cavity structures) appears on 345 US grants and 332 published applications in this corpus.
Search patents in H10H- Granted patents
- 345
- Published applications
- 332
- Assignees
- 201
- Inventors
- 731
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 8 | 0 |
| 1999 | 12 | 0 |
| 2000 | 10 | 0 |
| 2001 | 10 | 4 |
| 2002 | 18 | 16 |
| 2003 | 14 | 14 |
| 2004 | 18 | 16 |
| 2005 | 8 | 16 |
| 2006 | 10 | 16 |
| 2007 | 5 | 14 |
| 2008 | 7 | 7 |
| 2009 | 10 | 13 |
| 2010 | 10 | 11 |
| 2011 | 10 | 12 |
| 2012 | 11 | 10 |
| 2013 | 11 | 5 |
| 2014 | 11 | 8 |
| 2015 | 8 | 8 |
| 2016 | 9 | 10 |
| 2017 | 8 | 18 |
| 2018 | 12 | 15 |
| 2019 | 15 | 15 |
| 2020 | 16 | 13 |
| 2021 | 12 | 10 |
| 2022 | 4 | 19 |
| 2023 | 10 | 22 |
| 2024 | 10 | 13 |
| 2025 | 18 | 23 |
| 2026 | 11 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Porous III-nitrides and methods of using and making thereof24 Mar 2026US 12,588,433 B2Yale University
- Cascaded superlattice narrowband led6 Aug 2026US 2026/0231562 A1University of Iowa Research Foundation
- Optoelectronic semiconductor element4 Jun 2026US 2026/0156975 A1Industrial Technology Research Institute
- Lattice-matched heterostructure device9 Apr 2026US 2026/0101555 A1
- Light-emitting device26 Mar 2026US 2026/0090140 A1Epistar Corporation
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Most cited
By later US patents
- High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same260US 5,874,747 AAdvanced Technology Materials, Inc. · 1999
- Efficient semiconductor light-emitting device and method222US 5,493,577 ASandia Corporation · 1996
- Head-mounted display system207US 6,140,980 AKopin Corporation · 2000
- Light emitting diode195US 5,226,053 AAT&T Bell Laboratories · 1993
- Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff174US 6,455,340 B1Xerox Corporation · 2002