Semiconductor light source and driving circuit thereof

A semiconductor light source, comprising:

• an active layer;
• a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are located on two opposite sides of the active layer;
• and
• a first electrode, a second electrode, and a third electrode, wherein the first electrode is in ohmic contact with the first semiconductor layer, the third electrode is in ohmic contact with the second semiconductor layer, and a first dielectric layer is disposed between the first electrode and the second electrode,
• wherein the first semiconductor layer is a p-type semiconductor layer, and the second semiconductor layer is an n-type semiconductor layer;
• or the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer;
• wherein an orthographic projection of the first electrode on a plane where the active layer is located does not overlap an orthographic projection of the second electrode on the plane where the active layer is located, an orthographic projection of the first electrode on a first plane overlaps an orthographic projection of the second electrode on the first plane, and the first plane intersects the plane where the active layer is located;
• and
• wherein a shape of a projection of the first dielectric layer on the plane where the active layer is located comprises a zigzag shape or a spiral shape;
• and the first electrode and the second electrode are located on two opposite sides of the first dielectric layer.