Optoelectronic semiconductor element
AssigneeIndustrial Technology Research Institute
InventorHsueh-Hsing Liu
Life of this patent
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Abstract
An optoelectronic semiconductor element includes a substrate, a first N-type Bragg reflector, an N-type gallium nitride layer, a tunnel junction layer, a P-type gallium nitride layer, a light emitting layer, and a second N-type Bragg reflector sequentially stacked. The first N-type Bragg reflector has a first reflectivity, the second N-type Bragg reflector has a second reflectivity, both the first reflectivity and the second reflectivity are greater than or equal to 90%, and the first reflectivity is different from the second reflectivity.
Claims21
An optoelectronic semiconductor element, comprising:
- a substrate;
- a first N-type Bragg reflector disposed on the substrate, wherein the first N-type Bragg reflector has a first reflectivity;
- an N-type gallium nitride layer disposed on the first N-type Bragg reflector;
- a tunnel junction layer disposed on the N-type gallium nitride layer;
- a P-type gallium nitride layer disposed on the tunnel junction layer;
- a light emitting layer disposed on the P-type gallium nitride layer;
- and
- a second N-type Bragg reflector disposed on the light emitting layer, wherein the second N-type Bragg reflector has a second reflectivity,
- the first reflectivity and the second reflectivity are both greater than or equal to 90%, and the first reflectivity is different from the second reflectivity.
An optoelectronic semiconductor element, comprising:
- a substrate;
- a first N-type Bragg reflector disposed on the substrate, wherein the first N-type Bragg reflector has a first reflectivity;
- an N-type gallium nitride layer disposed on the first N-type Bragg reflector;
- a light emitting layer disposed on the N-type gallium nitride layer;
- a P-type gallium nitride layer disposed on the light emitting layer;
- a tunnel junction layer disposed on the P-type gallium nitride layer;
- and
- a second N-type Bragg reflector disposed on the P-type gallium nitride layer, wherein the second N-type Bragg reflector has a second reflectivity,
- the first reflectivity and the second reflectivity are both greater than or equal to 90%, and the first reflectivity is different from the second reflectivity.
Dependencies are inferred from the claim text.