H10F 77/1227
Characterised by the dopants
Official title: {characterised by the dopants}
H10F77/1227 (Characterised by the dopants) appears on 21 US grants and 34 published applications in this corpus.
Search patents in H10F- Granted patents
- 21
- Published applications
- 34
- Assignees
- 33
- Inventors
- 92
- Latest grant
- 3 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 2 |
| 2011 | 1 | 3 |
| 2012 | 2 | 2 |
| 2013 | 0 | 0 |
| 2014 | 4 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 1 |
| 2018 | 0 | 2 |
| 2019 | 0 | 2 |
| 2020 | 0 | 2 |
| 2021 | 0 | 3 |
| 2022 | 5 | 2 |
| 2023 | 0 | 4 |
| 2024 | 3 | 2 |
| 2025 | 3 | 2 |
| 2026 | 1 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide detector and fabrication method thereof3 Mar 2026US 12,568,710 B1Hefei National Laboratory
- Tandem photovoltaic device and production method23 Sep 2025US 12,426,381 B2Longi Green Energy Technology Co., Ltd.
- Photodiode with insulator layer along intrinsic region sidewall1 Jul 2025US 12,349,500 B2GLOBALFOUNDRIES U. S. Inc.
- Solar cell and production method thereof, photovoltaic module25 Feb 2025US 12,238,944 B2Jinko Solar Co., Ltd.
- Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device8 Oct 2024US 12,113,526 B2Lawrence Livermore National Security, LLC
- Solar cell and preparation method therefor30 Jul 2026US 2026/0223463 A1Tongwei Solar (Meishan) Co., Ltd.
- Semiconductor device and method of manufacturing the same23 Jul 2026US 2026/0215005 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sic uv photodetector11 Jun 2026US 2026/0164838 A1BAE Systems Information and Electronic Systems Integration Inc.
- Solar cell, preparation method thereof, and photovoltaic module28 May 2026US 2026/0150411 A1Jinko Solar (Shangrao) Co., Ltd
- Photodetectors and methods of formation27 Nov 2025US 2025/0366221 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Photodetector having a mixed crystal layer of SiGeC12US 6,459,107 B2Fujitsu Limited · 2002
- Energy conversion device6US 8,828,769 B2University of Central Florida · 2014
- Method of fabricating solid state gas dissociating device by laser doping5US 8,114,693 B1Partial Assignment University of Central Florida · 2012
- Solid state energy conversion device4US 8,067,303 B1Partial Assignment University of Central Florida · 2011
- Solid state gas dissociating device, solid state sensor, and solid state transformer4US 8,674,373 B2University of Central Florida · 2014