Energy conversion device

The process for making a solid-state energy device from an insulating substrate, comprising the steps of:

• providing a glass substrate (SiO2);
• converting a region of the glass substrate (SiO2) into silicon carbide (SiC);
• forming a carbon rich silicon carbide (SiC) in the silicon carbide (SiC);
• converting a first portion of the silicon carbide (SiC) into a N-type silicon carbide material (SiC) in contact with the carbon rich silicon carbide (SiC);
• converting a second portion of the silicon carbide (SiC) into a P-type silicon carbide (SiC);
• and
• forming a carbon rich silicon carbide (SiC) in contact with the P-type silicon carbide (SiC).

The process for making a solid-state energy device from an insulating substrate, comprising the steps of:

• providing a ceramic substrate (Al2O3);
• converting a region of the ceramic substrate (Al2O3) into aluminum nitride (AlN);
• forming aluminum (Al) first conductor into aluminum nitride (AlN);
• converting a first portion of the aluminum nitride (AlN) into N-type aluminum nitride (AlN);
• converting a second portion of the aluminum nitride (AlN) into a P-type aluminum nitride (AlN);
• and
• forming an aluminum (Al) conductor in contact with the P-type aluminum nitride (AlN).

The process for making a solid-state energy device from an insulating glass substrate, comprising the steps of:

• providing a substrate of an insulating glass material having a first surface and a second surface;
• converting a portion of the insulating, glass material of the substrate into one of an N-type and a P-type silicon carbide wide bandgap semiconductor material;
• converting an adjacent portion of the insulating glass material of the substrate into the other one of the N-type and the P-type silicon carbide wide bandgap semiconductor material and forming an electrical contact between the N-type and the P-type silicon carbide wide bandgap semiconductor materials;
• providing a first conductor in electrical contact with one of the N-type and the P-type silicon carbide wide bandgap semiconductor materials;
• and
• providing a second conductor in electrical contact with the other of the N-type and the P-type silicon carbide wide bandgap semiconductor materials.

The process for making a solid-state energy device from a glass substrate, comprising the steps of:

• providing a substrate of a glass material having a first surface and a second surface;
• applying a wide bandgap forming doping gas selected from the group consisting of acetylene, ethylene and methane to the glass substrate;
• concentrating a wide bandgap forming thermal energy inside of the substrate for converting a region of the glass material between the first and second surfaces into a silicon carbide material;
• concentrating a first conductor forming thermal energy inside of the substrate to form a first conductor within the silicon carbide material between the first and second surfaces of the substrate;
• applying a first type semiconductor forming doping gas selected from the group consisting of nitrogen (N2) and diethyl selenium (C2H5)2Se to the substrate;
• concentrating a first type semiconductor forming thermal energy inside of the substrate to form an N-type silicon carbide semiconductor material within the silicon carbide wide material between the first and second surfaces of the substrate and in electrical contact with the first conductor;
• applying a second type semiconductor forming doping gas selected from the group consisting of trimethyl aluminum ((CH3)3Al) and Bis(ethylbenzene)-chromium (C16H20Cr) to the substrate;
• concentrating a second type semiconductor thermal energy inside of the substrate to form a P-type silicon carbide semiconductor material within the silicon carbide wide bandgap material between the first and second surfaces of the substrate and in electrical contact with the N-type silicon carbide semiconductor material;
• and
• concentrating a second conductor forming thermal energy on the substrate to form a second conductor in electrical contact with the P-type silicon carbide semiconductor material.

The process for making a solid-state energy device from aluminum oxide ceramic substrate, comprising the steps of:

• providing a substrate of an aluminum oxide having a first surface and a second surface;
• applying a carbon source to react with the oxide to form a carbon oxide for removing oxygen from the aluminum oxide;
• applying a wide bandgap forming doping gas selected from the group consisting of nitrogen to the substrate;
• concentrating a wide bandgap forming thermal energy inside of the substrate for converting a region of the aluminum oxide material between the first and second surfaces into an aluminum nitride material (AlN);
• concentrating a first conductor forming thermal energy inside of the substrate to form a first conductor within the aluminum nitride material (AlN) between the first and second surfaces of the substrate;
• applying a first type semiconductor forming doping gas selected from the group consisting of oxygen (02) and silane (SiH4) to the substrate;
• concentrating a first type semiconductor forming thermal energy inside of the substrate to form an N-type aluminum nitride semiconductor material within the aluminum nitride wide bandgap material between the first and second surfaces of the substrate and in electrical contact with the first conductor;
• applying a second type semiconductor forming doping gas selected from the group consisting of methane (CH4) and Bis-magnesium dihydrate [Mg(TMHD)2] to the substrate;
• concentrating a second type semiconductor thermal energy inside of the substrate to form a P-type aluminum nitride semiconductor material within the aluminum nitride bandgap material between the first and second surfaces of the substrate and in electrical contact with the N-type aluminum nitride semiconductor material semiconductor material;
• and
• concentrating a second conductor forming thermal energy on the substrate to form a second conductor in electrical contact with the P-type aluminum nitride semiconductor material.