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US 6,459,107 B2Granted
Photodetector having a mixed crystal layer of SiGeC
AssigneeFujitsu Limited
InventorsYoshihiro Sugiyama, Yoshiki Sakuma
Life of this patent
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Abstract
A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C.
Claims7
A photodetector, comprising:
- a substrate;
- and
- an optical absorption layer provided on said substrate,
- said optical absorption layer comprising a mixed crystal of Si, Ge and C.
1 more element
Dependencies are inferred from the claim text.