Semiconductor device and method of manufacturing the same

A method, comprising:

• forming a first well region in a substrate, wherein the substrate comprises silicon;
• forming a second well region in the substrate and abutting the first well region;
• and
• forming a germanium structure on a surface of the substrate, wherein the second well region is arranged between the first well region and the germanium structure, wherein the germanium structure and the second well region comprise a first doping type, wherein the first well region comprises a second doping type opposite the first doping type, wherein a doping concentration of the germanium structure is greater than doping concentrations of the first well region and the second well region.

A method, comprising:

• performing a first implantation process to form a lateral connection region in a substrate, wherein the substrate comprises a first material, wherein a bulk of the substrate comprises a first doping type and the lateral connection region comprises a second doping type opposite the first doping type;
• performing a second implantation process to form a first contact region and a vertical connection region in the substrate, wherein the first contact region overlies the vertical connection region and the vertical connection region is on opposing sides of the lateral connection region, wherein the first contact region and the vertical connection region comprise the second doping type;
• performing a third implantation process to form an avalanche well in the substrate and over the lateral connection region, wherein the avalanche well comprises the first doping type;
• and
• forming an absorption structure on a surface of the substrate, wherein the absorption structure comprises a second material different from the first material, wherein the absorption structure comprises the first doping type and has a first doping concentration that is greater than approximately 2×1018 atoms/cm3.