Silicon carbide detector and fabrication method thereof

A silicon carbide detector, comprising:

• a silicon carbide substrate layer having a first doping type;
• and
• a silicon carbide base layer located on a side of the silicon carbide substrate layer, the silicon carbide base layer comprising a first silicon carbide layer, a second silicon carbide layer and a third silicon carbide layer that are stacked, the first silicon carbide layer having a second doping type, and the third silicon carbide layer having the first doping type;
• wherein the third silicon carbide layer serves as an anode layer and is located on a first region of the second silicon carbide layer, and a second region of the second silicon carbide layer is exposed;
• N drift rings are provided in the second region of the second silicon carbide layer, and among the N drift rings, a 1st drift ring is a closed ring and remaining drift rings are arranged in a spiral pattern around the 1st drift ring, a leading end of an (i+1)th drift ring being connected to a trailing end of an ith drift ring, N being 2 and i being 1, or N being an integer greater than 2, and i being, in turn, any integer from 1 to N−1;
• and in a plane parallel to a plane where the silicon carbide substrate layer lies, the anode layer is located in a closed region of the 1st drift ring;
• and
• the N drift rings each have the second doping type.