H10F 71/1035
Having multiple group iv elements
Official title: {having multiple Group IV elements, e.g. SiGe or SiC}
H10F71/1035 (Having multiple group iv elements) appears on 206 US grants and 90 published applications in this corpus.
Search patents in H10F- Granted patents
- 206
- Published applications
- 90
- Assignees
- 77
- Inventors
- 391
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 6 | 0 |
| 1986 | 7 | 0 |
| 1987 | 4 | 0 |
| 1988 | 5 | 0 |
| 1989 | 10 | 0 |
| 1990 | 8 | 0 |
| 1991 | 10 | 0 |
| 1992 | 8 | 0 |
| 1993 | 10 | 0 |
| 1994 | 10 | 0 |
| 1995 | 10 | 0 |
| 1996 | 14 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 2 | 0 |
| 2000 | 9 | 0 |
| 2001 | 6 | 1 |
| 2002 | 8 | 3 |
| 2003 | 4 | 3 |
| 2004 | 3 | 2 |
| 2005 | 0 | 2 |
| 2006 | 2 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 5 |
| 2009 | 0 | 2 |
| 2010 | 1 | 7 |
| 2011 | 2 | 4 |
| 2012 | 5 | 8 |
| 2013 | 1 | 6 |
| 2014 | 1 | 8 |
| 2015 | 4 | 6 |
| 2016 | 6 | 9 |
| 2017 | 2 | 4 |
| 2018 | 5 | 8 |
| 2019 | 8 | 1 |
| 2020 | 4 | 2 |
| 2021 | 1 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 2 |
| 2024 | 2 | 3 |
| 2025 | 1 | 1 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heterojunction cell and method for preparing same12 May 2026US 12,628,436 B2Anhui Huasun Energy Co., Ltd.
- Silicon-based heterojunction solar cell and manufacturing method thereof6 Jan 2026US 12,520,600 B1Trina Solar Co., Ltd.
- Photodiode heater4 Nov 2025US 12,464,855 B1
- Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region16 Jul 2024US 12,040,595 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Black-coloured photovoltaic device23 Apr 2024US 11,966,201 B2Nivarox-FAR S. A.
- Silicon-based heterojunction solar cell and manufacturing method thereof8 Jan 2026US 2026/0013236 A1Trina Solar Co., Ltd.
- Method for preparing topcon battery substrate and double-sided electroplated topcon battery prepared therefrom1 May 2025US 2025/0143003 A1Huansheng Photovoltaic (Jiangsu) Co., Ltd
- Heterojunction cell and method for preparing same18 Jul 2024US 2024/0243212 A1Anhui Huasun Energy Co., Ltd.
- Method for manufacturing transparent solar cell11 Apr 2024US 2024/0120432 A1Arche' Inc.
- Manufacturing method of silicon carbide thin film for transparent solar cell11 Apr 2024US 2024/0120433 A1Arche' Inc.
Most cited
By later US patents
- P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same277US 4,775,425 AEnergy Conversion Devices, Inc. · 1988
- Semiconductor device having a semiconductor region in which a band gap being continuously graded273US 5,093,704 ACanon Kabushiki Kaisha · 1992
- Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements242US 4,891,330 AEnergy Conversion Devices, Inc. · 1990
- Thin film solar cell including a spatially modulated intrinsic layer119US 4,816,082 AEnergy Conversion Devices, Inc. · 1989
- High quality photovoltaic semiconductor material and laser ablation method of fabrication same106US 5,231,047 AEnergy Conversion Devices, Inc. · 1993