Silicon-based heterojunction solar cell and manufacturing method thereof

A silicon-based heterojunction solar cell, comprising:

• a silicon substrate comprising a front side and a back side, the front side being arranged opposite to the back side;
• a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode, which are sequentially stacked on the front side of the silicon substrate along a first direction;
• wherein
• the first passivation layer comprises a first sub-passivation layer, a carbon-doped amorphous silicon layer, and a second sub-passivation layer which are sequentially stacked along the first direction;
• and
• the carbon-doped amorphous silicon layer is arranged between the first sub-passivation layer and the second sub-passivation layer, which is beneficial for an electronic band transition based on a defect density of carbon-doped amorphous silicon, thereby improving a conductivity of the first passivation layer;
• wherein a structural factor of the first sub-passivation layer is 0.6-0.75, a structural factor of the carbon-doped amorphous silicon layer is 0.45-0.58, and a structural factor of the second sub-passivation layer is 0.3-0.43.