Black-coloured photovoltaic device
AssigneeNivarox-FAR S.A.
InventorsJulien Bailat, Elisa Favre, Jan-Willem Schüttauf
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Abstract
A photovoltaic device includes an electrically-conductive front contact layer; an electrically-conductive back contact layer, the back contact layer being intended to be situated further from a source of incident light than the front contact layer; and a semiconductor-based PIN junction having a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer. The layer of the PIN junction situated closest to the back contact layer is a silicon-germanium alloy layer including at least 2 mol % of germanium.
Claims16
A photovoltaic device comprising:
- an electrically-conductive front contact layer;
- an electrically-conductive back contact layer, said back contact layer being situated further from a source of incident light than said front contact layer;
- and
- a semiconductor-based PIN junction comprising a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer,
- wherein the layer of said PIN junction situated closest to said back contact layer is a silicon-germanium alloy layer comprising at least 2 mol % of germanium.
Dependencies are inferred from the claim text.