P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

In an electronic device of the type which includes at least one set of contiguous p-type and n-type regions of semiconductor alloy material, the improvement comprising, in combination:

• the n-type semiconductor alloy region of said at least one set including a microcrystalline semiconductor alloy material having at least one band gap widening element incorported into the matrix thereof;
• said n-type material formed by a random network of relatively low conductivity, disordered regions surrounding highly ordered crystalline inclusions, said volume fraction of crystalline inclusions being greater than a threshold value at which the onset of substantial change in certain key parameters including electrical conductivity and bandgap occurs, whereby the material exhibits substantially increased electrical conductivity and a bandgap of at least about 1.9 eV.

In a photovoltaic device of the type which includes at least two superposed cells, each cell including a layer of n-type semiconductor alloy material, the improvement comprising:

• the n-type layer of each of the cells formed of an n-type microcrystalline semiconductor alloy material, said material including at least one band gap widening element;
• said n-type material formed by a random network of relatively low conductivity, disordered regions surrounding highly ordered crystalline inclusions, said volume fraction of crystalline inclusions being greater than a threshold value at which the onset of substantial change in certain key parameters including electrical conductivity and bandgap occurs, whereby the material exhibits substantially increased electrical conductivity and a band gap of at least about 1.9 eV.

In a single photovoltaic cell, said cell including a layer of n-type semiconductor alloy material, a layer of substantially intrinsic semiconductor alloy material and a layer of p-type semiconductor alloy material;

• the improvement comprising, in combination:
• the n-type layer and the p-type layers being microcrystalline and including at least one band gap widening element in each of the host matrixes thereof, said widening element selected from the group consisting essentially of nitrogen, carbon, oxygen, and combinations thereof;
• the n-type and p-type materials formed by a random network of relatively low conductivity, disordered regions surrounding highly ordered crystalline inclusions, said volume fraction of crystalline inclusions being greater than a threshold value at which the onset of substantial change in certain key parameters including electrical conductivity and bandgap occurs, whereby the material exhibits substantially increased electrical conductivity and a bandgap of at least about 1.9 eV.