H10F 39/1532
Frame-interline transfer
Official title: {Frame-interline transfer}
H10F39/1532 (Frame-interline transfer) appears on 44 US grants and 49 published applications in this corpus.
Search patents in H10F- Granted patents
- 44
- Published applications
- 49
- Assignees
- 29
- Inventors
- 76
- Latest grant
- 19 Jul 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 2 |
| 2002 | 3 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 7 |
| 2006 | 2 | 4 |
| 2007 | 3 | 5 |
| 2008 | 2 | 14 |
| 2009 | 5 | 3 |
| 2010 | 11 | 5 |
| 2011 | 5 | 2 |
| 2012 | 2 | 0 |
| 2013 | 2 | 0 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 2 |
| 2017 | 1 | 2 |
| 2018 | 1 | 0 |
| 2019 | 2 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Photoelectric conversion device, imaging system, and mobile apparatus19 Jul 2022US 11,393,870 B2Canon Kabushiki Kaisha
- Image sensor with glow suppression output circuitry20 Aug 2019US 10,389,960 B2Semiconductor Components Industries, LLC
- Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus23 Jul 2019US 10,361,244 B2Brillinics Inc.
- Charge-coupled device, manufacturing method thereof, and solid-state imaging element8 May 2018US 9,967,503 B2Hamamatsu Photonics K.K.
- Image sensor with buried-channel drain (BCD) transistors20 Jun 2017US 9,685,482 B2Semiconductor Components Industries, LLC
- Photoelectric conversion device, imaging system, and mobile apparatus18 Jun 2020US 2020/0194491 A1Canon Kabushiki Kaisha
- Image sensor with glow suppression output circuitry20 Jul 2017US 2017/0208283 A1Semiconductor Components Industries, LLC
- Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus8 Jun 2017US 2017/0162625 A1Brillnics Inc.
- Charge-coupled device, manufacturing method thereof, and solid-state imaging element29 Sep 2016US 2016/0286147 A1Hamamatsu Photonics K.K.
- Image sensor with buried-channel drain (bcd) transistors15 Sep 2016US 2016/0268335 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Device for wavelength-selective imaging106US 7,794,394 B2Beth Israel Deaconess Medical Center, Inc. · 2010
- Semiconductor image intensifier44US 6,278,142 B1Isetex, Inc. · 2001
- Image pickup apparatus having gradation control function for providing image signals definitive of backlighted objects38US 6,480,226 B1Canon Kabushiki Kaisha · 2002
- Method for producing ultra-thin semiconductor device24US 7,157,352 B2Sony Corporation · 2007
- Color image capture element and color image signal processing circuit22US 7,170,046 B2Sanyo Electric Co., Ltd. · 2007