Semiconductor image intensifier

A solid-state photosensor device, comprising:

• a carrier-multiplication area, in which a high electric field can be applied to induce impact ionization;
• and
• a photocarrier collection area, comprising a semiconductor material of a first conductivity types;
• device structure which permits charge collected in said collection area to be multiplied in said multiplication area;
• wherein said carrier-multiplication area nowhere overlies said channel stop.

A solid-state charge-amplification device structure, comprising:

• a laterally confined charge-storage well;
• and
• a carrier multiplication region, at which high electric fields can be applied to induce impact ionization of carriers within said well;
• wherein said multiplication region lies entirely within the interior of said well.

A sensor that includes at least one cell, each cell comprising:

• a channel formed in a substrate;
• a gate electrode structure insulatively disposed over and transverse to the channel having an aperture formed therein;
• and
• a charge multiplication gate electrode insulatively disposed over and within the aperture.

A sensor comprising:

• a channel formed in a substrate;
• a charge multiplication gate electrode;
• and
• at least first, second and third gate electrodes insulatively disposed over and transverse to the channel, the first and third gate electrodes having respective reticulations therein, the second gate electrode having a gap therethrough in a vicinity of the reticulations in the first and third gate electrodes so as to frame and aperture,
• wherein the charge multiplication gate electrode is insulatively disposed over and within the aperture.