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US 7,157,352 B2Granted
Method for producing ultra-thin semiconductor device
AssigneeSony Corporation
InventorHideo Yamanaka
Life of this patent
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Abstract
A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.
Claims2
A method of production of an ultrathin semiconductor device comprising the steps of:
- forming a first single crystalline semiconducinr layer on a seed substrate via a first porous semiconductor peeling layer;
- bonding said seed substrate from said first single crystalline semiconductor layer side in the state with an insulating layer interposed to a support substrate having a second single crystalline semiconductor layer formed thereon via a second porous semiconductor peeling layer wherein the first porous semiconductor peeling layer has a greater porosity than the second porous semiconductor peeling layer;
- separating said seed substrate using said first porous semiconductor peeling layer as an interface;
- and
- separating said support substrate using said second porous semiconductor peeling layer as an interface to obtain said first single crystalline semiconductor layer formed on said insulating layer.
2 more elements
A method of production of an ultra-thin semiconductor device comprising the steps of:
- forming a first single crystalline semiconductor layer on a seed substrate via a first porous semiconductor peeling layer;
- bonding said seed substrate from said first single crystalline semiconductor layer side in the state with an insulating layer interposed to a support substrate having a second single crystalline semiconductor layer formed thereon via a second porous semiconductor peeling layer wherein the first porous semiconductor peeling layer has a greater thickness than the second porous semiconductor peeling layer;
- separating said seed substrate using said first porous semiconductor peeling layer as an interface;
- and
- separating said support substrate using said second porous semiconductor peeling laycr as an interface to obtain said first single crystalline semiconductor layer formed on said insulating layer.
2 more elements
Dependencies are inferred from the claim text.