Charge-coupled device, manufacturing method thereof, and solid-state imaging element

A charge-coupled device comprising:

• a semiconductor substrate including a plurality of pixel regions aligned in one direction;
• and
• an insulation film provided on the semiconductor substrate,
• wherein each pixel region includes
• a photoelectric conversion region which performs photoelectric conversion on an incident energy beam,
• a resistive gate electrode provided on the insulation film on the photoelectric conversion region, wherein a predetermined fixed voltage is applied between the ends of the resistive gate electrode;
• a first transfer electrode provided on the insulation film,
• a second transfer electrode provided on the insulation film and disposed between the first transfer electrode and a pixel region adjacent to the pixel region,
• a barrier region positioned directly beneath the first transfer electrode in the semiconductor substrate, and
• a charge accumulation region positioned directly beneath the second transfer electrode in the semiconductor substrate, an impurity concentration of the barrier region is lower than an impurity concentration of the charge accumulation region, and the first transfer electrode and the second transfer electrode are electrically connected to each other,
• wherein a potential barrier region having a lower impurity concentration than the photoelectric conversion region is formed between the charge accumulation region in a pixel region and the photoelectric conversion region in a pixel region adjacent to a rear stage of the pixel region.