Photoelectric conversion device, imaging system, and mobile apparatus

A photoelectric conversion device comprising:

• a pixel including a plurality of photoelectric conversion units;
• and
• a select unit configured to control each of the plurality of photoelectric conversion units to be in an active state or an inactive state,
• wherein the select unit includes a quench circuit shared by the plurality of photoelectric conversion units and a selector circuit arranged between the plurality of photoelectric conversion units and the quench circuit,
• wherein the plurality of photoelectric conversion units has a first group including a first avalanche diode and a second group including a second avalanche diode,
• wherein the select unit controls the first group to be in the inactive state and controls the second group to be in the active state when noise included in a signal output from the first group exceeds a predetermined value, and
• wherein the pixel includes a well region surrounded by an element isolation region.

A photoelectric conversion device comprising:

• a pixel including a plurality of photoelectric conversion units;
• and
• a select unit configured to control each of the plurality of photoelectric conversion units to be in an active state or an inactive state,
• wherein the select unit includes a quench circuit shared by the plurality of photoelectric conversion units and a selector circuit arranged between the plurality of photoelectric conversion units and the quench circuit,
• wherein the plurality of photoelectric conversion units have a first group including a first avalanche diode and a second group including a second avalanche diode,
• wherein the select unit controls the second group to be in the inactive state in a first case of controlling the first group to be in the active state, and the select unit controls the first group to be in the inactive state in a second case of controlling the second group to be in the active state,
• wherein in the pixel, the number of photoelectric conversion units in the active state is the same between the first case and the second case, and
• wherein the pixel includes a well region surrounded by an element isolation region.