H10D 44/45
Having field effect produced by insulated gate electrodes
Official title: having field effect produced by insulated gate electrodes
H10D44/45 (Having field effect produced by insulated gate electrodes) appears on 678 US grants and 144 published applications in this corpus.
Search patents in H10D- Granted patents
- 678
- Published applications
- 144
- Assignees
- 151
- Inventors
- 736
- Latest grant
- 11 Mar 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 51 | 0 |
| 1977 | 49 | 0 |
| 1978 | 37 | 0 |
| 1979 | 31 | 0 |
| 1980 | 35 | 0 |
| 1981 | 22 | 0 |
| 1982 | 10 | 0 |
| 1983 | 13 | 0 |
| 1984 | 5 | 0 |
| 1985 | 13 | 0 |
| 1986 | 15 | 0 |
| 1987 | 23 | 0 |
| 1988 | 15 | 0 |
| 1989 | 20 | 0 |
| 1990 | 16 | 0 |
| 1991 | 16 | 0 |
| 1992 | 7 | 0 |
| 1993 | 19 | 0 |
| 1994 | 26 | 0 |
| 1995 | 23 | 0 |
| 1996 | 20 | 0 |
| 1997 | 12 | 0 |
| 1998 | 8 | 0 |
| 1999 | 14 | 0 |
| 2000 | 15 | 0 |
| 2001 | 20 | 5 |
| 2002 | 10 | 5 |
| 2003 | 14 | 7 |
| 2004 | 5 | 5 |
| 2005 | 0 | 4 |
| 2006 | 12 | 12 |
| 2007 | 9 | 16 |
| 2008 | 2 | 12 |
| 2009 | 7 | 11 |
| 2010 | 15 | 9 |
| 2011 | 9 | 11 |
| 2012 | 8 | 2 |
| 2013 | 10 | 3 |
| 2014 | 7 | 4 |
| 2015 | 6 | 5 |
| 2016 | 4 | 5 |
| 2017 | 2 | 5 |
| 2018 | 5 | 4 |
| 2019 | 4 | 4 |
| 2020 | 5 | 3 |
| 2021 | 3 | 3 |
| 2022 | 2 | 2 |
| 2023 | 1 | 2 |
| 2024 | 1 | 4 |
| 2025 | 2 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices11 Mar 2025US 12,249,638 B2Khalifa University of Science and Technology
- Methods and systems for high bandwidth communications interface21 Jan 2025US 12,206,531 B2Kandou Labs, S.A.
- Memory device having 2-transistor vertical memory cell and wrapped data line structure2 Apr 2024US 11,950,426 B2Micron Technology, Inc.
- Memory device having 2-transistor vertical memory cell and wrapped data line structure28 Mar 2023US 11,616,073 B1Micron Technology, Inc.
- Film package and method of fabricating package module13 Dec 2022US 11,527,470 B2Samsung Electronics Co., Ltd.
- Energy saving, size reduction, and performance enhancement with charge domain digital logic and memory9 Jul 2026US 2026/0196282 A1Aistorm Inc.
- Charge transfer device having a taper at the gate for clock frequencies from 100 mhz10 Oct 2024US 2024/0339528 A1
- Charge transfer device having an influx portion for clock frequencies from 100 MHz10 Oct 2024US 2024/0339529 A1
- Memory device having 2-transistor vertical memory cell and wrapped data line structure25 Jul 2024US 2024/0251563 A1Micron Technology, Inc.
- Photoelectric conversion device25 Jan 2024US 2024/0030270 A1Hamamatsu Photonics K.K.
Most cited
By later US patents
- Method of making two-phase charge coupled device134US 5,292,682 AEastman Kodak Company · 1994
- Controllable charge-coupled semiconductor device130US 4,032,947 ASiemens Aktiengesellschaft · 1977
- CCD Demodulator circuit95US 4,484,143 ARockwell International Corporation · 1984
- High resolution charge-coupled device (CCD) camera system77US 5,182,647 AEastman Kodak Company · 1993
- Virtual phase charge transfer device68US 4,229,752 ATexas Instruments Incorporated · 1980