Charge transfer device having an influx portion for clock frequencies from 100 MHz

A charge transfer device

• having a charge transfer channel in a semiconductor substrate
• having a doped conduction layer
• for movably accepting the charge carriers,
• having a sequence of at least two electrically isolated gates
• which adjacently succeed one another
• for transferring the charge carriers in the conduction layer in a flow direction,
• wherein the charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer, and
• and having a clock generator
• having a clock frequency of more than 100 MHZ,
• which applies changes in potential at the clock frequency to the gates,
• for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer to adjacent regions of the overlap between adjacent gates and the conduction layer,
• wherein
• the charge transfer channel has an influx region
• which, in the flow direction, is arranged at a lateral outer boundary of the charge transfer channel and
• which at least partly extends over the regions of exactly two adjacent gates of the charge transfer channel
• in order to supply charge carriers to the charge transfer channel from a region outside the charge transfer channel that adjoins the influx region from a second charge transfer channel, and
• in order to reduce the spillback or the flow resistance or the loss of the charge carriers in the flow direction of the charge transfer channel or of the region supplying charge carriers to the charge transfer channel of a second charge transfer channel.