H01S 5/2232
With inner confining structure between the active layer and the lower electrode
Official title: {with inner confining structure between the active layer and the lower electrode}
H01S5/2232 (With inner confining structure between the active layer and the lower electrode) appears on 252 US grants and 66 published applications in this corpus.
Search patents in H01S- Granted patents
- 252
- Published applications
- 66
- Assignees
- 69
- Inventors
- 378
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 9 | 0 |
| 1983 | 5 | 0 |
| 1984 | 7 | 0 |
| 1985 | 8 | 0 |
| 1986 | 13 | 0 |
| 1987 | 14 | 0 |
| 1988 | 17 | 0 |
| 1989 | 27 | 0 |
| 1990 | 14 | 0 |
| 1991 | 10 | 0 |
| 1992 | 10 | 0 |
| 1993 | 9 | 0 |
| 1994 | 11 | 0 |
| 1995 | 7 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 6 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 5 | 1 |
| 2002 | 3 | 5 |
| 2003 | 2 | 4 |
| 2004 | 3 | 4 |
| 2005 | 5 | 5 |
| 2006 | 2 | 3 |
| 2007 | 0 | 2 |
| 2008 | 1 | 5 |
| 2009 | 1 | 3 |
| 2010 | 2 | 1 |
| 2011 | 3 | 3 |
| 2012 | 3 | 1 |
| 2013 | 2 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 2 |
| 2016 | 2 | 2 |
| 2017 | 1 | 1 |
| 2018 | 1 | 2 |
| 2019 | 4 | 3 |
| 2020 | 3 | 5 |
| 2021 | 3 | 1 |
| 2022 | 1 | 2 |
| 2023 | 2 | 7 |
| 2024 | 5 | 3 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Optical semiconductor device and method for producing same11 Aug 2026US 12,706,444 B2Mitsubishi Electric Corporation
- Diode laser with current block4 Nov 2025US 12,463,400 B2Ferdinand-Braun-Institut Ggmbh, Leibniz-Institut FüR HöChstfrequenztechnik
- Method for fabricating semiconductor device17 Dec 2024US 12,170,436 B2Modulight Corporation
- Semiconductor optical device and optical transceiver module5 Nov 2024US 12,136,797 B2Lumentum Operations LLC
- Method of manufacture for an ultraviolet emitting optoelectronic device22 Oct 2024US 12,126,143 B2KYOCERA SLD Laser, Inc.
- Control Of Current Spread In Semiconductor Laser Devices12 Dec 2024US 2024/0413612 A1II-Vi Delaware, Inc.
- Semiconductor laser element3 Oct 2024US 2024/0332911 A1Nichia Corporation
- Optical semiconductor device and method for producing same18 Apr 2024US 2024/0128724 A1Mitsubishi Electric Corporation
- Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component16 Nov 2023US 2023/0369827 A1ams-OSRAM International GmbH
- Optical semiconductor device12 Oct 2023US 2023/0327405 A1Mitsubishi Electric Corporation
Most cited
By later US patents
- Integrated thermal ink jet printhead and method of manufacture112US 4,847,630 AHewlett-Packard Company · 1989
- Distributed feedback-channeled substrate planar semiconductor laser80US 5,295,150 AEastman Kodak Company · 1994
- Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same69US 6,320,209 B1Sharp Kabushiki Kaisha · 2001
- Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same67US 5,717,709 ASharp Kabushiki Kaisha · 1998
- Channeled mesa laser49US 4,317,085 AXerox Corporation · 1982