Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same

A semiconductor light-emitting device including a substrate having one of p- and n-conductivity types, a current constrictive layer formed on a surface of the substrate and having the other of the p- and n-conductivity types, the current constrictive layer having at least one through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate, and a double heterostructure formed on the current constrictive layer and including a first cladding layer, an active layer and a second cladding layer, characterized in that:

• the through-channel is of a belt-like pattern which extends perpendicularly to end surfaces of the substrate;
• and the semiconductor light-emitting device comprises
• a third cladding layer having the one type of conductivity, at least one portion of the third cladding layer being filled in the through-channel, and the at least one portion of the third cladding layer having an upper surface flush with an upper surface of the current constrictive layer.