Diode laser with current block

Diode laser, comprising:

• an n-substrate made of an n-doped material;
• an n-cladding layer made of an n-doped material disposed on the n-substrate;
• an n-waveguide layer made of an n-doped material disposed on the n-cladding layer;
• an active layer disposed on the n-waveguide layer;
• a p-waveguide layer made of a p-doped material disposed on the active layer;
• a p-cladding layer made of a p-doped material disposed on the p-waveguide layer;
• a p-contact layer made of a p-doped material disposed on the p-cladding layer;
• and
• a p-contact disposed on the p-contact layer;
• wherein the diode laser comprises a layered current block made of a material doped in opposition to its surroundings for a spatially selective current injection of the active layer between the n-substrate and the p-contact;
• wherein the current block is separated from adjacent layers via an intrinsic outer layer, wherein the thickness of the intrinsic outer layer is between 5 nm and 50 nm, wherein the current block comprises a first layer having a first thickness and a second layer disposed on the first layer having a second thickness greater than the first thickness, and wherein the sum of the thicknesses of the first layer and the second layer is between 5 nm and 100 nm.