H01S 5/0211
Substrates made of ternary or quaternary compounds
Official title: {Substrates made of ternary or quaternary compounds}
H01S5/0211 (Substrates made of ternary or quaternary compounds) appears on 47 US grants and 32 published applications in this corpus.
Search patents in H01S- Granted patents
- 47
- Published applications
- 32
- Assignees
- 38
- Inventors
- 116
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 4 | 4 |
| 2003 | 8 | 1 |
| 2004 | 3 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 2 |
| 2007 | 1 | 1 |
| 2008 | 1 | 2 |
| 2009 | 2 | 2 |
| 2010 | 2 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 1 | 1 |
| 2016 | 0 | 1 |
| 2017 | 2 | 1 |
| 2018 | 0 | 2 |
| 2019 | 4 | 1 |
| 2020 | 0 | 1 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 3 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Spontaneous and stimulated emission devices based on relaxed III-nitride materials30 Jun 2026US 12,671,232 B2Opnovix Corp.
- Relaxed Wurtzite Ingan layers3 Feb 2026US 12,542,413 B2Opnovix Corp.
- Method of manufacturing vertical cavity surface emitting laser element and vertical cavity surface emitting laser element27 Jan 2026US 12,537,364 B2Nichia Corporation
- Nitride light emitter3 May 2022US 11,322,908 B2Nuvoton Technology Corporation Japan
- AlInGaN alloy based laser diode8 Oct 2019US 10,439,362 B2Inst. Wysokich Cisnien Polskiej Akademii Nauk
- Spontaneous and stimulated emission devices based on relaxed iii-nitride materials3 Sep 2026US 2026/0261098 A1Opnovix Corp.
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
- Spontaneous and stimulated emission devices based on relaxed iii-nitride materials8 Jan 2026US 2026/0011983 A1Opnovix Corp.
Most cited
By later US patents
- Indium gallium nitride smoothing structures for III-nitride devices274US 6,635,904 B2Lumileds Lighting U.S., LLC · 2003
- Indium gallium nitride smoothing structures for III-nitride devices225US 6,489,636 B1Lumileds Lighting U.S., LLC · 2002
- Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth216US 5,625,202 AUniversity of Central Florida · 1997
- Light-emitting semiconductor device producing red wavelength optical radiation81US 6,542,528 B1Ricoh Company, Ltd. · 2003
- Extended wavelength strained layer lasers having strain compensated layers53US 5,825,796 APicolight Incorporated · 1998