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US 10,439,362 B2Granted
AlInGaN alloy based laser diode
AssigneesTopgan Sp. Z O.O., Inst. Wysokich Cisnien Polskiej Akademii Nauk
InventorsSzymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin
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Abstract
The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.
Claims11
An AlInGaN alloy based laser diode, comprising:
- a gallium nitride substrate;
- a lower cladding layer with n-type electrical conductivity;
- a lower light-guiding-cladding layer with n-type electrical conductivity;
- a light emitting layer;
- an upper light-guiding-cladding layer with p-type electrical conductivity;
- an upper cladding layer with p-type electrical conductivity;
- and
- a subcontact layer with p-type electrical conductivity;
- wherein the lower light-guiding-cladding layer and upper light-guiding-cladding layer have a continuous, non-step like and smooth change of indium and/or aluminium content.
6 more elements
Dependencies are inferred from the claim text.