Method of manufacturing vertical cavity surface emitting laser element and vertical cavity surface emitting laser element

A method of manufacturing a vertical cavity surface emitting laser element including a first reflector including a nitride semiconductor multilayer film, the method comprising:

• growing a first semiconductor layer consisting of a group III semiconductor containing aluminum and indium, the growing of the first semiconductor layer consisting of
• growing a first layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas, and
• growing a second layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas so that an indium composition ratio of the second layer is higher than an indium composition ratio of the first layer;
• and
• growing a second semiconductor layer consisting of gallium nitride, wherein
• the growing of the first semiconductor layer and the growing of the second semiconductor are repeated alternately to form the nitride semiconductor multilayer film constituting the first reflector, and
• in each cycle of the growing of the first semiconductor layer the growing of the second layer is performed after the growing of the first laver.