H01S 2301/18
Semiconductor lasers with special structural design for influencing the near- or far-field
H01S2301/18 (Semiconductor lasers with special structural design for influencing the near- or far-field) appears on 527 US grants and 578 published applications in this corpus.
Search patents in H01S- Granted patents
- 527
- Published applications
- 578
- Assignees
- 253
- Inventors
- 1,156
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 8 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 10 | 0 |
| 2000 | 15 | 0 |
| 2001 | 10 | 5 |
| 2002 | 9 | 25 |
| 2003 | 18 | 27 |
| 2004 | 21 | 31 |
| 2005 | 22 | 30 |
| 2006 | 24 | 32 |
| 2007 | 14 | 35 |
| 2008 | 26 | 28 |
| 2009 | 24 | 28 |
| 2010 | 28 | 33 |
| 2011 | 22 | 30 |
| 2012 | 17 | 21 |
| 2013 | 23 | 16 |
| 2014 | 22 | 11 |
| 2015 | 19 | 21 |
| 2016 | 14 | 15 |
| 2017 | 13 | 13 |
| 2018 | 19 | 16 |
| 2019 | 11 | 18 |
| 2020 | 12 | 17 |
| 2021 | 14 | 35 |
| 2022 | 12 | 23 |
| 2023 | 17 | 21 |
| 2024 | 20 | 27 |
| 2025 | 13 | 16 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Surface-emitting semiconductor light-emitting device28 Apr 2026US 12,614,892 B2Kabushiki Kaisha Toshiba
- Laser comprising a distributed bragg mirror and production method31 Mar 2026US 12,592,543 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor waveguide optical gain device with lateral current confinement31 Mar 2026US 12,592,546 B1HieFo Corporation
- High-power single-mode triple-ridge waveguide semiconductor laser24 Feb 2026US 12,562,550 B2Clemson University Research Foundation
- Semiconductor laser device3 Feb 2026US 12,542,426 B2Mitsubishi Electric Corporation
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Edge-emitting semiconductor laser, method of manufacturing a plurality of edge-emitting semiconductor lasers, laser component and method of manufacturing a laser component23 Jul 2026US 2026/0213496 A1ams-OSRAM International GmbH
- Refractive index engineering for brightness enhancement and kink suppression in optical emitting devices5 Feb 2026US 2026/0039088 A1II-Vi Delaware, Inc.
- Semiconductor laser5 Feb 2026US 2026/0039090 A1Lumentum Japan, Inc.
- Semiconductor laser device20 Nov 2025US 2025/0357730 A1Ushio Denki Kabushiki Kaisha
Most cited
By later US patents
- Semiconductor laser device, and method of manufacturing the same236US 7,470,555 B2Nichia Corporation · 2008
- High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays91US 5,216,263 AXerox Corporation · 1993
- High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays without a substrate86US 5,317,170 AXerox Corporation · 1994
- Vertical cavity surface emmitting lasers with transparent electrodes83US 5,115,441 AAT&T Bell Laboratories · 1992
- Semiconductor laser using gallium nitride series compound semiconductor76US 6,252,894 B1Kabushiki Kaisha Toshiba · 2001