Surface-emitting semiconductor light-emitting device

A surface-emitting semiconductor light-emitting device, comprising:

• a semiconductor substrate of a first conductivity type;
• a first semiconductor layer provided on a front surface of the semiconductor substrate, the first semiconductor layer being of the first conductivity type;
• an active layer provided on the first semiconductor layer;
• a photonic crystal layer provided on the active layer, the photonic crystal layer including a plurality of protrusions arranged along an upper surface of the active layer;
• a second semiconductor layer provided on the photonic crystal layer, the second semiconductor layer being of the first conductivity type;
• a first electrode provided on the second semiconductor layer;
• and
• a second electrode provided on a back surface of the semiconductor substrate, the semiconductor substrate being positioned between the first semiconductor layer and the second electrode,
• the second electrode including
• a planar contact portion contacting the back surface of the semiconductor substrate, and
• a plurality of fine wire contact portions extending into a surface-emitting region in the back surface of the semiconductor substrate, the light radiated from the active layer being externally emitted from the surface-emitting region,
• the fine wire contact portions being arranged in the surface-emitting region,
• the fine wire contact portions being rotationally asymmetric, and
• the fine wire contact portions having neither line symmetry nor point symmetry.