H01J 1/308
Semiconductor cathodes
Official title: Semiconductor cathodes, e.g. cathodes with PN junction layers
H01J1/308 (Semiconductor cathodes) appears on 136 US grants and 66 published applications in this corpus.
Search patents in H01J- Granted patents
- 136
- Published applications
- 66
- Assignees
- 54
- Inventors
- 235
- Latest grant
- 13 Aug 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 8 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 7 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 2 | 2 |
| 2002 | 5 | 3 |
| 2003 | 4 | 6 |
| 2004 | 4 | 5 |
| 2005 | 8 | 6 |
| 2006 | 2 | 4 |
| 2007 | 1 | 3 |
| 2008 | 1 | 1 |
| 2009 | 2 | 0 |
| 2010 | 2 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 2 |
| 2014 | 2 | 4 |
| 2015 | 5 | 7 |
| 2016 | 6 | 3 |
| 2017 | 5 | 4 |
| 2018 | 2 | 2 |
| 2019 | 3 | 1 |
| 2020 | 2 | 1 |
| 2021 | 2 | 1 |
| 2022 | 3 | 4 |
| 2023 | 2 | 1 |
| 2024 | 2 | 1 |
| 2025 | 0 | 3 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vacuum channel electronic element, optical transmission circuit, and laminated chip13 Aug 2024US 12,062,650 B2
- Electron emission device and electron microscope30 Jul 2024US 12,051,557 B2National Institute of Advanced Industrial Science and Technology
- Ultraviolet field-emission lamps and their applications3 Oct 2023US 11,776,802 B2NS Nanotech, Inc.
- Electron emitting element and power generation element30 May 2023US 11,664,182 B2Kabushiki Kaisha Toshiba
- Vacuum channel field effect transistor, producing method thereof, and semiconductor device18 Oct 2022US 11,476,074 B2
- Electron source7 May 2026US 2026/0128249 A1Kabushiki Kaisha Toshiba
- Electron source27 Nov 2025US 2025/0364199 A1
- Field emission device, and x-ray generation device using same27 Nov 2025US 2025/0364204 A1LG Electronics Inc.
- Package having field emission element and x-ray device having the same28 Aug 2025US 2025/0275297 A1LG Electronics Inc.
- Ultraviolet field-emission lamps and their applications28 Mar 2024US 2024/0105441 A1NS Nanotech, Inc.
Most cited
By later US patents
- p-n Junction controlled field emitter array cathode140US 4,513,308 AThe United States of America as represented by the Secretary of the Navy · 1985
- Electron emitting device with diamond83US 5,202,571 ACanon Kabushiki Kaisha · 1993
- Semiconductor device for generating an electron beam and method of manufacturing same61US 4,303,930 AU. S. Philips Corporation · 1981
- Semiconductor device having a cold cathode56US 4,766,340 A1988
- Method of semiconductor device for generating electron beams37US 4,370,797 AU. S. Philips Corporation · 1983