Electron emitting device with diamond
AssigneeCanon Kabushiki Kaisha
InventorsKeiji Hirabayashi, Noriko Kurihara, Takeo Tsukamoto, Nobuo Watanabe, Masahiko Okunuki
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Abstract
An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.
Claims31
An electron emitting device provided with a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieves by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor layer is used as said electron avalanche inducing layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said electron avalanche inducing layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 .ANG. is used as said electron avalanche inducing layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a thickness not greater than 100 .ANG. and a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor diamond layer is used and said electron avalanche inducing layer and said metal layer has a thickness no greater than 100 .ANG. and a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said semiconductor layer and a Schottky electrode with a thickness no greater than 500 .ANG. is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 .ANG. is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 .ANG. and a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 .ANG. and has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 .ANG. and a work function no greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 .ANG. is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 .ANG. is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 .ANG. and a work function no greater than an energy band gap.
AN electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semi-conductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 .ANG. and with a work function no greater than an energy bandgap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer;
- and
- wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 .ANG. and a work function no greater than an energy bandgap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer formed on said p-semiconductor layer, wherein the electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a thickness no greater than 100 .ANG. and a work function greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer and said metal compound layer has a thickness no greater than 100 .ANG. and a work function greater than an energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a heterojunction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a thickness no greater than 100 .ANG. and a work function no greater than the energy band gap width of said p-semiconductor layer.
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state;
- and
- wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a thickness no greater than 100 .ANG. and a work function no greater than the energy band gap width of said p-semiconductor layer.
Dependencies are inferred from the claim text.