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US 2026/0128249 A1Published application
Electron source
AssigneeKabushiki Kaisha Toshiba
InventorsHisao MIYAZAKI, Shigeya KIMURA, Shinya NUNOUE, Akira FUJIMOTO, Yuma YAMAGUCHI
Life of this patent
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Abstract
According to one embodiment, an electron source includes a first member. The first member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first bandgap energy and is of p-type. The second semiconductor layer includes a first region. The first region has a second bandgap energy larger than the first bandgap energy, and is of n-type.
Claims20
An electron source, comprising:
- a first member including:
- a first semiconductor layer of p-type, the first semiconductor layer having a first bandgap energy;
- a second semiconductor layer including a first region, the first region having a second bandgap energy larger than the first bandgap energy, the first region being of n-type.
An electron source comprising:
- a first member including:
- a first semiconductor layer including InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, x+y≤1) and including magnesium;
- a second semiconductor layer including a first region, the first region including diamond and including a first element including at least one selected from the group consisting of phosphorus and nitrogen.
Dependencies are inferred from the claim text.